Power Modules

Power Modules
Heritage
- Three phase bridge
- Half bridge switch
- Full bridge switch
- Boost converter
- Buck converter
- Double forward converter
- Thrust vector controls
- Improved Performance - discrete components are tested at full current / power ratings and can be selected for matched performance prior to PM assembly
- Improved Reliability - uses prescreened & qualified components and thermally matched materials to maximize power evacuation while minimizing thermal stress
- Higher Working Currents and Lower Conduction Losses– replaces wire bonds with heavy gauge, high current handling heatsunk copper traces
- Weight Reduction – uses lightweight materials
- Simplified Next Level Assembly – terminations optimally located to interface with the system
- Any Size or Shape – takes full advantage of available system real estate, including 3D capability
- Any Terminal Type– high power threaded, soldered male/female turrets, flex cable, power bar, etc; mix & match different control and power connections
- Repairable / Reworkable
Material Technology
- Hermetic SMT components
- DBC substrate, typ 5 - 8 mil thick copper
- Ceramic: typically alumina (Al2O3); Aluminum Nitride (AlN) for thermally challenging applications
- Rugged I/O connections: typically Beryllium Copper (BeCu) for enhanced hardness
- Baseplate: typically AlSiC, used as an electrically isolated heat spreader and mechanical interface
- High voltage potting
Performance / Features
- High thermal conductivity
- Layout optimized for circuitry and I/O
- Includes passive components such as:
- Thermistors or current sense resistors
- Capacitors
- Inductors
- Thermal stress minimization via CTE matched materials
- Application specific solution
- Simplifies procurement with single item

Sedpack 2: RθJC = 0.7°C/W
Substrate | AlN | Al203 |
t | 0.025 in. | 0.025 in. |
W | 0.315 in. | 0.315 in. |
L | 0.315 in. | 0.315 in. |
K | 170 W/m°K | 20 W/m°K |
Thermal Resistance | 0.06°/W | 0.50°/W |
Examples of Power Modules
Battery Bypass Module

- Application: space / satellite
- 450 A / leg discharge, 50 A / leg charge
- AlSiC baseplate, CTE matched components
Three Phase IGBT Bridge

- Application: launch vehicle
- 600 A, 600 V
Four Cell High Current Schottky Power Diodes

- High current Schottky centertap assembly
- AlSiC baseplate, CTE matched components
Battery Bypass Module

- Rad hard half bridge MOSFET
- Application: space level / non-repairable
- Two power MOSFETs in parallel for current enhancement
- Dual independently controlled channels
- 125 W, 200 V DC
- 27 A steady state current, 65 A peak current
- AlSiC baseplate, CTE matched components
Battery Charge Power Module

- Application: space
- 60 A, 1000 V for use with NiH2 batteries, hermetically sealed
- VR = 1 kV, IO = 60 A
- AlSiC baseplate
- Temperature range: -65°C to +150°C
- 27 A steady state current, 65 A peak current