• Three phase bridge
• Half bridge switch
• Full bridge switch
• Boost converter
• Buck converter
• Double forward converter
• Thrust vector controls

• Improved Performance - discrete components are tested at full current / power ratings and can be selected for matched performance prior to PM assembly
• Improved Reliability - uses prescreened & qualified components and thermally matched materials to maximize power evacuation while minimizing thermal stress
• Higher Working Currents and Lower Conduction Losses– replaces wire bonds with heavy gauge, high current handling heatsunk copper traces
• Weight Reduction – uses lightweight materials
• Simplified Next Level Assembly – terminations optimally located to interface with the system
• Any Size or Shape – takes full advantage of available system real estate, including 3D capability
• Any Terminal Type– high power threaded, soldered male/female turrets, flex cable, power bar, etc; mix & match different control and power connections
• Repairable / Reworkable

Material Technology

• Hermetic SMT components
• DBC substrate, typ 5 - 8 mil thick copper
• Ceramic: typically alumina (Al₂O₃); Aluminum Nitride (AlN) for thermally challenging applications
• Rugged I/O connections: typically Beryllium Copper (BeCu) for enhanced hardness
• Baseplate: typically AlSiC, used as an electrically isolated heat spreader and mechanical interface
• High voltage potting

Performance / Features

• High thermal conductivity
• Layout optimized for circuitry and I/O
• Includes passive components such as:
  • Thermistors or current sense resistors
  • Capacitors
  • Inductors
• Thermal stress minimization via CTE matched materials
• Application specific solution
• Simplifies procurement with single item

Sedpack 2: R_θJC = 0.7°C/W

Battery Bypass Module

• Application: space / satellite
• 450 A / leg discharge, 50 A / leg charge
• AlSiC baseplate, CTE matched components

Three Phase IGBT Bridge

• Application: launch vehicle
• 600 A, 600 V

Four Cell High Current Schottky Power Diodes

• High current Schottky centertap assembly
• AlSiC baseplate, CTE matched components

Battery Bypass Module

• Rad hard half bridge MOSFET
• Application: space level / non-repairable
• Two power MOSFETs in parallel for current enhancement
• Dual independently controlled channels
• 125 W, 200 V DC
• 27 A steady state current, 65 A peak current
• AlSiC baseplate, CTE matched components

Battery Charge Power Module

• Application: space
• 60 A, 1000 V for use with NiH2 batteries, hermetically sealed
• V_R = 1 kV, I_O = 60 A
• AlSiC baseplate
• Temperature range: -65°C to +150°C
• 27 A steady state current, 65 A peak current