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SGF48N10
48 A, 100 V, 6 mΩ GaN Power FET Enhancement Mode
Parameters
More Information
| Vdss [V] |
100 |
| Id [A] |
48 |
| Rds(on) typ [mΩ] |
5.50 |
| Rds(on) max [mΩ] |
6.00 |
| Pd [W] |
25 |
| Bv dss [V] |
100.00 |
| Package |
SMG.3-1 |
| Data Sheet |
FT0071A.PDF |
Features
• 4th Generation Gallium Nitride Technology
• Exceptionally Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High-Freq. Applications
• Low Thermal Resistance
• Hermetically Sealed, Chip-Scale Package (SMG.3-1)
• TX, TXV, and S-Level Screening Available
APPLICATIONS:
• High Efficiency DC-DC/PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace
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