Parameters
Vdss [V] | 50 |
---|---|
Id [A] | 75 |
Rds(on) typ [mΩ] | 15.00 |
Rds(on) max [mΩ] | 17.00 |
Pd [W] | 150 |
Bv dss [V] | 50.00 |
Package | TO-254Z |
Data Sheet | F00257E.PDF |
Polarity | N-Channel |
Features
• Advanced High-Cell Density Withstands High Energy
• Very Low Conduction and Switching Losses
• Fast Recovery Drain-to-Source Diode with Soft Recovery
• Rugged Construction with Poly-Si Gate
• Ultra Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• TX, TXV and Space Level Screening Available
• Very Low Conduction and Switching Losses
• Fast Recovery Drain-to-Source Diode with Soft Recovery
• Rugged Construction with Poly-Si Gate
• Ultra Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Package
• TX, TXV and Space Level Screening Available