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SGF48N20S1
40 A, 200 V, 14 mΩ GaN Power FET Enhancement Mode
Parameters
More Information
Vdss [V] |
200 |
Id [A] |
40 |
Rds(on) typ [mΩ] |
11.00 |
Rds(on) max [mΩ] |
14.00 |
Pd [W] |
25 |
Bv dss [V] |
200.00 |
Package |
SMD1 |
Data Sheet |
FT0072B.PDF |
Features
• 4th Generation Gallium Nitride Technology
• Exceptionally Low RDS(ON)
• Low QG Simplifies Gate Drive Circuit
• Very Fast Switching for High-Freq. Applications
• Low Thermal Resistance
• TX, TXV, and S-Level Screening Available
APPLICATIONS:
• High Efficiency DC-DC/PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace