SGF46E70M
46 A, 700 V, 30 mΩ typical GaN FET Normally-Off
SKU
SGF46E70M
Parameters
Vdss [V] | 700 |
---|---|
Id [A] | 46 |
Rds(on) typ [mΩ] | 30.00 |
Rds(on) max [mΩ] | 41.00 |
Pd [W] | 125 |
Bv dss [V] | 700.00 |
Package | TO-254 |
Data Sheet | FT0074D.PDF |
Features
• 3rd Generation Gallium Nitride Technology
• Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance
• Works with Common Gate Drivers
• Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High Frequency Applications
• Low Thermal Resistance
• Hermetically Sealed Package
• TX, TXV, and S-Level Screening Available
• Available as Normally-On (without the Si Mosfet Driver)
APPLICATIONS:
• High Efficiency DC-DC / PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace