SGF43E70-28
43 A, 700 V, 39 mΩ typical GaN FET Normally-Off
SKU
SGF43E70-28
Parameters
| Vdss [V] | 700 |
|---|---|
| Id [A] | 43 |
| Rds(on) typ [mΩ] | 39.00 |
| Rds(on) max [mΩ] | 45.00 |
| Pd [W] | 83 |
| Bv dss [V] | 700.00 |
| Package | LCC28 |
| Data Sheet | FT0080B.PDF |
Features
• 3rd Generation Gallium Nitride Technology
• Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance
• Works with Common Gate Drivers
• Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High Frequency Applications
• Low Thermal Resistance - Internal Heat Sink
• Hermetically Sealed Surface Mount Package
• Extremely Small Footprint and Low Profile
• TX, TXV, and S-Level Screening Available
• Available as Normally-On (without the Si Mosfet Driver)
APPLICATIONS:
• High Efficiency DC-DC / PoL Converters
• Motor Controller
• Military and Aerospace
