• Two Devices in One Compact Hermetically Sealed Package • Connect in Parallel to Achieve 30 A • Can Be Used Individually or in Half Bridge Configuration (15 A) • 3rd Generation Gallium Nitride Technology • Combines GaN HEMT and Low Voltage Si MOSFET (Cascode) for Superior Performance • Works with Common Gate Drivers • Low RDS(ON) • Low QG Simplifies Gate Drive Circuit • Very Fast Switching for High Frequency Applications • Low Thermal Resistance • TX, TXV, and S-Level Screening Available • Available as Normally-On (without the Si FET Driver)
APPLICATIONS: • High Efficiency DC-DC / PoL Converters • Motor Controller • Robotics/Automation • Military and Aerospace
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