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SFS2530/48
25 A, 300 V Fast Switching Silicon Controlled Rectifier
Parameters
More Information
Vdrm [V] |
300 |
Io [A] |
25 |
Igt max [mA] |
180.00 |
Vgt max [V] |
1.50 |
Ih max [mA] |
70.00 |
Package |
TO-48 |
Data Sheet |
SCR006B.PDF |
Features
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25°C
• Low Holding Current IH = 1 mA (Max) @ 25°C
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available