Parameters
Vdss [V] | 600 |
---|---|
Id [A] | 4.2 |
Rds(on) typ [mΩ] | 720.00 |
Rds(on) max [mΩ] | 1,200.00 |
Pd [W] | 21 |
Bv dss [V] | 600.00 |
Package | LCC28 |
Data Sheet | F00343D.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Surface Mount Package
• TX, TXV, and S-Level Screening Available
• Replacement for IRFC40 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Surface Mount Package
• TX, TXV, and S-Level Screening Available
• Replacement for IRFC40 Types