• Rugged Construction with Poly Silicon Gate • Low RDS(on) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dv/dt Performance • Increased Reverse Energy Capability • Low Input and Transfer Capacitance for Easy Paralleling • Hermetically Sealed • TX, TXV, and Space Level Screening Available • Replaces IRF9160 Types
| 
