• Rugged Construction with Poly-Si Gate • Low RDS(on) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dv/dt Performance • Increased Reverse Energy • Low Input and Transfer Capacitance for Easy Paralleling • Ceramic Seals for Improved Hermeticity • Hermetically Sealed Package • Replaces: IXTH50N20 Types
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