Parameters
| Vdss [V] | 500 |
|---|---|
| Id [A] | 13 |
| Rds(on) typ [mΩ] | 350.00 |
| Rds(on) max [mΩ] | 400.00 |
| Pd [W] | 125 |
| Bv dss [V] | 500.00 |
| Package | TO-254 |
| Data Sheet | F00097E.PDF |
| Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate Cell
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Power Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRFM450 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Power Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRFM450 Types
