Parameters
Vdss [V] | 500 |
---|---|
Id [A] | 4.5 |
Rds(on) typ [mΩ] | 1,500.00 |
Rds(on) max [mΩ] | 1,600.00 |
Pd [W] | 25 |
Bv dss [V] | 500.00 |
Package | TO-5 |
Data Sheet | F00117B.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Poly-Si Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRF430 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals for Improved Hermeticity
• Hermetically Sealed Package
• TX, TXV, and Space Level Screening Available
• Replaces: IRF430 Types