SFF35N50/3
35 A, 500 V, 0.09 Ω N-Channel Power MOSFET
SKU
SFF35N50/3
Parameters
| Vdss [V] | 500 |
|---|---|
| Id [A] | 35 |
| Rds(on) typ [mΩ] | 80.00 |
| Rds(on) max [mΩ] | 90.00 |
| Pd [W] | 250 |
| Bv dss [V] | 500.00 |
| Package | TO-3 |
| Data Sheet | F00175G.PDF |
| Polarity | N-Channel |
Features
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, and Space Level Screening Available
• Replacement / Enhancement for IXTH24N50 Types
