• Rugged Construction with Poly-Si Gate • Low RDS(on) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dv/dt Performance • Increased Reverse Energy Capability • Low Input and Transfer Capacitance for Easy Paralleling • Hermetically Sealed, Isolated Power Package • Ceramic Seals for Improved Hermeticity • TX, TXV, S-Level Screening Available