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SFF26N100S2
26 A, 1000 V, 175 mΩ Avalanche Rated N-Channel MOSFET
Parameters
More Information
Vdss [V] |
1000 |
Id [A] |
26 |
Rds(on) typ [mΩ] |
160.00 |
Rds(on) max [mΩ] |
175.00 |
Pd [W] |
300 |
Bv dss [V] |
1,000.00 |
Package |
SMD2 |
Data Sheet |
FT0062D.PDF |
Polarity |
N-Channel |
Features
• Rugged Poly-Si Gate
• Lowest ON-Resistance in the Industry
• Avalanche Rated
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level Screening Available
• Improved (RDS(on) QG) Figure of Merit