• Rugged Construction with Polysilicon Gate • Low RDS(on) and High Transconductance • Excellent High Temperature Stability • Very Fast Switching Speed • Fast Recovery and Superior dv/dt Performance • Increased Reverse Energy Capability • Low Input and Transfer Capacitance for Easy Paralleling • Available with Ceramic Seal - Consult Factory • Hermetically Sealed Isolated Power Package • TX, TXV, S-Level screening available • Replaces: IRFY240 and 2N7219 Types