Parameters
Vdss [V] | 200 |
---|---|
Id [A] | 15 |
Rds(on) typ [mΩ] | 130.00 |
Rds(on) max [mΩ] | 180.00 |
Pd [W] | 63 |
Bv dss [V] | 220.00 |
Package | TO-257 |
Data Sheet | F00111D.PDF |
Polarity | N-Channel |
Features
• Rugged Construction with Polysilicon Gate
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Available with Ceramic Seal - Consult Factory
• Hermetically Sealed Isolated Power Package
• TX, TXV, S-Level screening available
• Replaces: IRFY240 and 2N7219 Types
• Low RDS(on) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dv/dt Performance
• Increased Reverse Energy Capability
• Low Input and Transfer Capacitance for Easy Paralleling
• Available with Ceramic Seal - Consult Factory
• Hermetically Sealed Isolated Power Package
• TX, TXV, S-Level screening available
• Replaces: IRFY240 and 2N7219 Types