• Stackable to 600 kV+ • PIV 10 kV • High Current Ratings • Standard Reverse Recovery Time • Void-free, Hermetically Sealed Diode Cells • Controlled Avalanche • Modular Design for Easy Stacking • Storage and Operating Temps -65°C to +150°C • Available in Fast, Ultrafast and Hyperfast Versions • TX, TXV, and S-Level Screening Available • Direct Replacement Upgrade – Microsemi / Unitrode type UGE-2.5 through type UGB-10 and 1N5603