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SFS07100
7 A, 100 V Silicon Controlled Rectifier
Parameters
More Information
| Vdrm [V] |
100 |
| Io [A] |
7 |
| Igt typ [mA] |
0.02 |
| Igt max [mA] |
0.20 |
| Vgt typ [V] |
0.51 |
| Vgt max [V] |
0.80 |
| Ih typ [mA] |
1.25 |
| Ih max [mA] |
10.00 |
| Package |
TO-5 |
| Data Sheet |
SCR011D.PDF |
Features
• Low-Level Gate Characteristics
• IGT = 20 µA (typical) @ 25°C
• Low Holding Current IH = 1.25 mA (typ) @ 25°C
• Anode Common to Case
• Hermetically Sealed
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