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SFS2324
1.6 A, 100 V Silicon Controlled Rectifier
Parameters
More Information
| Vdrm [V] |
100 |
| Io [A] |
1.6 |
| Igt typ [mA] |
0.00 |
| Igt max [mA] |
0.20 |
| Vgt typ [V] |
0.51 |
| Vgt max [V] |
0.70 |
| Ih typ [mA] |
1.00 |
| Ih max [mA] |
2.00 |
| Package |
TO-5 |
| Data Sheet |
SCR004C.PDF |
Features
• Low-Level Gate Characteristics
• IGT = 200 μA (Max) @ 25°C
• Low Holding Current IH = 1 mA (Max) @ 25°C
• Anode Common to Case
• Hermetically Sealed
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