JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

SSG200EF60E

200 A, 600 V N-Channel IGBT with Anti-Parallel Diode

SKU

SSG200EF60E

Skip to the end of the images gallery

Skip to the beginning of the images gallery

Parameters

More Information
Vceo [V]	600
Ic [A]	200
Vce (sat) typ [V]	1.65
Vce (sat) max [V]	2.00
Pd [W]	625
t(off) max [nsec]	1500
Package	Milpack III
Data Sheet	G00003B.PDF

Features

• Outstanding Current Capability
• Low On-State Conductive Losses
• Very Simple Gate Drive Design
• Improved SOA Characterization
• Low Input Capacitance
• High Reverse Voltage Rating Available
• TX, TXV, S-Level Screening Available

Product Line Information

Aerospace & Defense Products
High Voltage Discretes & Assemblies
High Power Discretes, Hybrids, & Modules
End of Life / DMS Solutions
Power Industrial Products

Latest News

2024.02.26 - New, Rad Tolerant High Side Power Switch
2024.01.18 - New & Featured Products 2024 Brochure Released
2023.10.18 - New, RAD Tolerant 100 V PFETs for HiRel Programs

About Us

JANS Certified / ISO 9001 and AS9100 Certified Manufacturer of High Power and High Voltage Products for the Aerospace and Defense Industries