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SGF48N10S1
48 A, 100 V, 8 mΩ GaN Power FET Enhancement Mode
Parameters
More Information
Vdss [V] |
100 |
Id [A] |
48 |
Rds(on) max [mΩ] |
8.00 |
Pd [W] |
25 |
Bv dss [V] |
100.00 |
Package |
SMD1 |
Data Sheet |
FT0070D.PDF |
Features
• 4th Generation Gallium Nitride Technology
• Exceptionally Low RDSon
• Low Qg Simplifies Gate Drive Circuit
• Very Fast Switching for High-Freq. Applications
• Low Thermal Resistance
• Hermetically Sealed Package
• Available in Hermetically Sealed, Chip-Scale Package (SMG.3-1) – Consult Factory
• TX, TXV, and S-Level Screening Available
APPLICATIONS:
• High Efficiency DC-DC/PoL Converters
• Motor Controller
• Robotics/Automation
• Military and Aerospace