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La Mirada, California – SSDI has released the SFC80N200, a new 2000 V SiC MOSFET. This enhancement mode, N-channel SiC MOSFET was developed to meet the high voltage requirements of a deep space program. The SFC80N200 offers 55 – 80 A and a low RDS(on) of 21 mΩ typical (28 mΩ max). The customer needed a fast switching, low RDS(on) MOSFET above 1000 V for a new switching power supply. They were searching for the highest voltage rating available for the highest voltage derating possible, which helps to mitigate radiation effects. Since SSDI continually seeks to deliver the highest performance solutions for aerospace and defense applications, it has the flexibility to meet customers’ electrical requirements.

SSDI’s flexibility also extends to meeting customers’ mechanical requirements. The customer requested a prototype of the SFC80N200 in the TO-254 package without the lid to facilitate radiation testing. The final design will use the surface mount SMD1 package. SSDI also offers the SMD1L option with customizable ribbon leads, which reduce the risk of vibration stress and thermal fatigue. As long as the die can fit in the desired package, SSDI can meet the customer design with a standard, hermetic package or offer package modifications.

Multiple deep space programs have added SSDI’s 900 V SiC MOSFETs to replace traditional silicon MOSFETs as low as 28 V. By opting to use SiC MOSFETs, these programs benefit from faster switching, lower RDS(on), and higher voltage capabilities. For example, the SFC85N90 and SFC200N90 have replaced silicon MOSFETs to deliver enhanced performance and optimize board space on rover, manned spacecraft, and satellite designs. Similarly, the SFC80N200 can provide the same performance and reliability advantages when replacing silicon MOSFETs at much lower voltages.

If your program encounters supply chain, performance, or board space issues with silicon MOSFETs, SSDI’s SiC MOSFETs line can offer a high performance alternative with multiple package options. Contact SSDI online or at (562) 404-4474, to discuss your current program needs.

SFC80N200: New 2 kV SiC MOSFET for Aerospace & Defense

• Fast switching, low capacitance
• High blocking voltage, low RDS(on)
• Easy to parallel, simple to drive
• Resistant to latch-up
• Hermetically sealed power packaging
• TX, TXV, S-level screening available

SSDI's Hermetic SiC Schottkys & MOSFETs brochure is also available for download at SUPPORT > Literature